Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies
نویسندگان
چکیده
f0 Ideal Abstract The first realization of a class-F InGaP/GaAs HBT amplifier considering up to 7th-order higher harmonic frequencies, operating at 1.9 GHz, is described. For a class-F amplifier design in microwave frequency ranges, not only increasing the number of treated harmonic frequencies, but also decreasing quantities of intrinsic and parasitic elements in a transistor is important. Measured PAE and collector efficiency are 78.7 % and 81.2 %, respectively, at Vcc = 4.0 V and f0 = 1.91 GHz in case circuit losses are de-embedded.
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عنوان ژورنال:
- IEICE Transactions
دوره 89-C شماره
صفحات -
تاریخ انتشار 2006